Infineon 17N80C3 800V 17A N Channel MOSFET TO-247 Package Speaker Wire 1V Operating Temperature -55°C~150°C Storage

1V Operating Temperature -55°C~150°C Storage Temperature -55°C~150°C Package Bridge Diode

N-Channel MOSFET

High noise margins and strong immunity to isolation-mode transients are provided by this modulation

power supply up to 90 W without the efficiency restriction of DCM or audible noise

Used as a switching device

Infineon 17N80C3 800V 17A N Channel MOSFET TO-247 Package Speaker Wire 1V Operating Temperature -55°C~150°C StorageThese Power MOSFETs are designed using the company's consolidated strip layout based MESH OVERLAY process. The result is very high voltage Power MOSFETs with outstanding performances. The strengthened layout, coupled with the companys proprietary edge termination structure, gives the lowest Rds(on) per area, unrivalled gate charge, and switching characteristics. Features New revolutionary high voltage technology Ultra low gate charge Periodic